2026年11月3日星期二
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Comparative analysis of gate-dielectric effects on the analog and linearity performance of MoS2-, MoSe2-, and WS2-based FETs

المصدر Nature 物理科学قبل 4 يوم
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English
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science-ab7f1cf5

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Comparative analysis of gate-dielectric effects on the analog and linearity performance of MoS2-, MoSe2-, and WS2-based FETs · مرآة العالم الشاملة