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Comparative analysis of gate-dielectric effects on the analog and linearity performance of MoS2-, MoSe2-, and WS2-based FETs

Quelle Nature 物理科学Vor 5 Tagen
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Comparative analysis of gate-dielectric effects on the analog and linearity performance of MoS2-, MoSe2-, and WS2-based FETs · Weltübersicht