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Chroniques universelles
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Comparative analysis of gate-dielectric effects on the analog and linearity performance of MoS2-, MoSe2-, and WS2-based FETs

Source Nature 物理科学il y a 5 jours
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Chaîne d'appartenance
Science
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Perspective mondiale
Langue de l'original
English
Numéro d'entrée
science-ab7f1cf5

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Comparative analysis of gate-dielectric effects on the analog and linearity performance of MoS2-, MoSe2-, and WS2-based FETs · Chroniques universelles