2026年11月3日星期二
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Comparative analysis of gate-dielectric effects on the analog and linearity performance of MoS2-, MoSe2-, and WS2-based FETs

स्रोत Nature 物理科学4 दिन पहले
सामग्री सारांश

यह साइट केवल शीर्षक और सारांश सूचकांक प्रदान करती है, पूरी सामग्री और कॉपीराइट मूल प्रकाशक के पास हैं, कृपया मूल लिंक पर क्लिक करके पढ़ें।

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मूल भाषा
English
प्रविष्टि संख्या
science-ab7f1cf5

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Comparative analysis of gate-dielectric effects on the analog and linearity performance of MoS2-, MoSe2-, and WS2-based FETs · विश्व व्यापक संदर्भ