Nature Materials, Published online: 27 October 2026; doi:10.1038/s41563-026-02780-7

Intrinsic electric polarization in III-nitride semiconductors is an advantage for large-scale optoelectronic devices but remains largely unexplored in sensory-memristive devices. Polarization-induced spatial separation of photogenerated carriers at the interfaces of III-nitride heterostructures enables efficient and scalable in-sensor computing at room temperature.