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Comparative analysis of gate-dielectric effects on the analog and linearity performance of MoS2-, MoSe2-, and WS2-based FETs

Source Nature 物理科学4d ago
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Desk
Science
Region
Global
Language
English
Item ID
science-ab7f1cf5

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Comparative analysis of gate-dielectric effects on the analog and linearity performance of MoS2-, MoSe2-, and WS2-based FETs · Meridian Globe