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Author Correction: Wafer-scale epitaxy growth of high-mobility p-type boron carbon nitride

Source Nature 科学2d ago
Summary

Author Correction: Wafer-scale epitaxy growth of high-mobility p-type boron carbon nitride

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Desk
Science
Region
Global
Language
English
Item ID
science-fa9cb4cb

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Author Correction: Wafer-scale epitaxy growth of high-mobility p-type boron carbon nitride · Meridian Globe